Abstract

Ba(Sn0.2Ti0.8)O3 (BTS) thin films were deposited on Pt/Ti/SiO2/Si and LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing technique, respectively. The influences of substrates on the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The results showed that the substrates strongly influenced the microstructure and the dielectric properties of the films. The properties of BTS thin films on LaNiO3/Pt/Ti/SiO2/Si substrates were superior to that of the films grown on Pt/Ti/SiO2/Si substrates.

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