Abstract
The dielectric properties of BaTiO3 thin films deposited on (La0.5Sr0.5)MnO3 (LSMO) and (La0.5Sr0.5)CoO3 (LSCO), respectively, as buffer layer, were studied. The influence of buffer layer on the phase of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. These results showed that the buffer layer strongly influenced the structure and the dielectric properties of the films. The BaTiO3 thin films on LSMO buffered Pt/Ti/SiO2/Si substrates have enhanced tunability and lower leakage current.
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