Abstract
Ba(Zr 0.20Ti 0.80)O 3 (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) substrates by the sol–gel technique. The thickness of the CeO 2, serving as a buffer layer, is varied from 0 to 20 nm, to study the dependence of the orientation and dielectric properties of the BZT thin films on the buffer layer thickness. The influence of buffer layer thickness on the microstructure of the thin films is also examined. Dielectric properties of the thin films are investigated as a function of temperature and direct current electric field. The results show that the CeO 2 buffer layer strongly influences the orientation, microstructure and the dielectric properties of the films. The BZT thin films with 5 nm thickness CeO 2 buffer layer have the least loss, smallest leakage current and largest figure of merit (FOM).
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