Abstract
The chemical vapour deposition of SnO 2 films in a plasma of SnCl 4 and O 2 has been studied using optical emission spectroscopy and laser interferometry techniques. The Arrhenius equation with an activation energy of 0.25 eV can be used to describe the relationship between increase in the deposition rate and substrate temperature. The deposition rate depends apparently on the flow rate of SnCl 4. Under the experimental conditions the formation of SnO occurs mainly on the substrate surface.
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