Abstract
The luminescent properties of porous silicon (PS) have been studied in terms of its electrical properties and photo-conduction effects. It is shown that the electrical conduction mode of the PS layers at low temperatures below about 100 K is dominated by tunneling either in the dark or under illumination, and that the photoconduction spectra of efficiently luminescent PS almost coincide with the photoluminescence (PL) excitation spectra. The implication is that the electronic excitation for both photoconduction (PC) and PL occurs in the same place. Effects of electric field on the PL characteristics of PS are also studied in relation to PC effects. The experimental data demonstrate that the degree of electric-field PL quenching corresponds to the net PC current induced during PL excitation. These observations are discussed in relation to the visible luminescence mechanism.
Published Version
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