Abstract

Abstract A split C-V measurement is a technique commonly used for evaluating surface carrier density and inversion layer mobility in MOSFETs. On the other hand, the accuracy of surface carrier density evaluated by split C-V can be affected by channel resistance. In this study we propose a method to correct the impact of channel resistance on split C-V measurements by using both capacitance and conductance experimental data. We employ a transmission line model to express the relationship between ideal and measured Cgc values and obtain the correct Cgc values. The effectiveness of this correction method is experimentally verified by long-channel Si MOSFETs at room and cryogenic temperatures. It is demonstrated that accurate effective mobility evaluation is realized by using this method.

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