Abstract

Abstract Metal-insulator-semiconductor (MIS) contact was achieved by inserting an insulator layer between nickel and WS2 films using the physical-vapor-deposition (PVD) method. The insulator of Al2O3 film was successfully deposited even on the PVD-WS2 films through the atomic-layer deposition (ALD) method, as confirmed by cross-sectional transmission electron microscope (TEM). The contact resistance was measured by varying the thickness of the Al2O3 insulating layer and compared it with that of a conventional top contact structure. The results showed that the contact resistance decreased with the insertion of a 0.1-nm-Al2O3 layer, likely because of the effective release of the Fermi level pinning and a consequent reduction in the Schottky barrier height. This conclusion provides valuable insights for future applications in devices such as 3-dimensionalstacked FETs (3DSFETs) with WS2 channels.

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