Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+

Abstract

AbstractThe photoluminescence (PL) spectra from Al0.98Gd0.02N and Al0.87Gd0.13N consisting of Gd3+ related 3.95 eV sharp emission lines and other bands, and the PL excitation (PLE) spectra from 3 to 7 eV have been investigated by using a highly linear polarized synchrotron radiation light source. The Gd related 3.95 eV sharp lines in the PL spectra are similar to those in other cathodoluminescence (CL) and PL research works. However, the broad emission bands around 3.95 eV lines which are normally found in other CL works are not observed. Other broad emission bands are clearly observed in the energy region of 1.5 ∼ 3.5 eV. PLE spectra monitored at both the 3.95 eV sharp line and the broad emission band of Al0.98Gd0.02N clearly indicate that these emission processes are host excitations which are reflected by an AlN‐like band structure and crystalline anisotropy. On the other hand, the PLE and optical reflectance spectra of Al0.87Gd0.13N reveal an unclear band structure with a long band tail to in the lower energy side (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)