Abstract
We investigate the excitation behavior of a repulsive impurity doped quantum dot under the influence of randomly fluctuating dopant potential. We have considered Gaussian impurity centers doped at different locations. The investigation reveals the interplay between dopant location and dopant’s spatial stretch in modulating the excitation pattern. Maximization in the excitation rate has been observed as a function of fluctuating dopant strength owing to the conflict between opposing influences that promote and hinder excitation.
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