Repulsive impurity doped quantum dot subjected to oscillatory confinement potential: Role of dopant strength and dopant location on time-evolution

Abstract

We explore the pattern of time evolution of eigenstates of a repulsive impurity doped quantum dot. The quantum dot is 2-dimensional and contains one electron which is harmonically confined. We have considered Gaussian impurity centers. A static transverse magnetic field is also present. Under a periodically fluctuating confinement potential, the system reveals a long time dynamics. The investigation points to a typical value of impurity potential strength at which the excitation is maximum. This typical value has also been found to be strongly dependent on dopant location. The rate of transition between the eigenstates depends delicately on several impurity dependent factors modulated by the oscillating confinement potential and explains the excitation maximization quite elegantly.