Role of impurity influenced domain on excitation profile of doped quantum dot subject to oscillatory confinement potential

Abstract

We explore the excitation profile of a repulsive impurity doped quantum dot under a periodically fluctuating confinement potential. We have considered Gaussian impurity centers. The investigation points to a minimum value of spatial extension of impurity domain below which significant excitation is not feasible. In general, excitation becomes maximum at some typical value of impurity strength depending upon the location and the spatial stretch of the dopant. The rate of transition to the excited states depends on the above spatial stretch which gets modulated by the oscillating confinement potential and explains the excitation maximization quite elegantly.