The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

Abstract

p-Type Metal-Oxide Transistors In article number 2100267 by Sung Haeng Cho and co-workers, a facile route for the fabrication of solution-processed high-performance p-type metal-oxide thin film transistors is developed using potassium-doped SnO (K-SnO). This development of high-performance p-type metal-oxide semiconductors comparable to n-type ones opens a new window for the realization of transparent, flexible, and low-power integrated circuits in large area electronics.