High performance printed p-type metal halide and oxide thin film transistors (Conference Presentation)

Abstract

Over the past decade, amorphous metal oxide semiconductors have attracted great interest as low-cost alternatives to thin film transistors (TFTs) due to their high electron mobility, high optical transparency, good environmental/thermal stability, and processing versatility. In contrast, realization of high performance transparent p-type oxide semiconductors remain intangible with urgent industrial demands. In this work, we report solution-processed inorganic p-type copper iodide (CuI) and oxide thin film transistors (TFTs). The spin coated CuI film showed high mobility over 2 cm2 V-1 s-1 by proper treatments such as optimization process condition and applying dopant. Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated. We also introduce our recent results of perovskite transistors.