The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys

Abstract

The GSST (Ge-Sb-Se-Te) alloy has been investigated to be a competitive material choice for high density phase-change memory with robust data retention by introducing the doped Se and the excess Ge in Ge-Sb-Te ternary system. The Se dopants are found to increase the crystallization temperature and reduce the grain size. And the excess Ge atoms play a vital role in promoting the thermal stability of doped alloy. The reversible memory switching capability evidences that the GSST alloy is a potential reliable phase-change material in storage application for automobile systems.