Abstract
Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb2Te3 superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.
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