The linear statistical d.c. model of GaAs MESFET using factor analysis

Abstract

The linear statistical model of the GaAs MESFET's current generator is obtained by means of factor analysis. Three different MESFET deterministic models are taken into account in the analysis: the Statz model (ST), the Materka-type model (MT) and a new proprietary model of MESFET with implanted channel (PLD). It is shown that statistical models obtained using factor analysis provide excellent generation of the multidimensional random variable representing the drain current of MESFET. The method of implementation of the statistical model into the SPICE program is presented. It is proved that for a strongly limited number of Monte Carlo analysis runs in that program, the statistical models considered in each case (ST, MT and PLD) enable good reconstruction of the empirical factor structure. The empirical correlation matrix of model parameters is not reconstructed exactly by statistical modelling, but values of correlation matrix elements obtained from simulated data are within the confidence intervals for the small sample. This paper proves that a formal approach to statistical modelling using factor analysis is the right path to follow, in spite of the fact, that CAD systems (PSpice[MicroSim Corp.], Microwave Harmonica[Compact Software]) are not designed properly for generation of the multidimensional random variable. It is obvious that further progress in implementation of statistical methods in CAD software is required. Furthermore, a new approach to the MESFET's d.c. model is presented. The separate functions, describing the linear as well as the saturated region of MESFET output characteristics, are combined in the single equation. This way of modelling is particularly suitable for transistors with an implanted channel.