Abstract
In this paper, for the first time, the influence of the Kirk effect on the on-state performance of a Lateral Insulated Gate Bipolar Transistor (LIGBT) in the Double Epitaxial Layer Dielectric Isolation (DELDI) technology is presented. Unlike Junction Isolation (JI) or dielectrically isolating (DI) technologies, due to confinement of carriers within a thin pseudo-substrate, the Kirk effect plays a vital role in the enhancement of the on-state performance of a MOS-Bipolar device such as the LIGBT in the DELDI technology. Furthermore, the influence of the Kirk effect on the lateral isolation of devices has also been evaluated under static conditions.
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