Abstract
N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 175 MeV Ni3+ ions and Co-60 gamma radiation in the dose range of 100 krad to 100 Mrad. The I-V characteristics of MOSFETs were studied systematically before and after ion and gamma irradiation. The threshold voltage (VTH) of the irradiated MOSFETs was found to decrease with increase in ion and gamma dose. The more degradation was observed in the devices irradiated with Co-60 gamma radiation than irradiated with Ni13+ ions at given total doses.
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