Investigation of FDSOI and PDSOI MOSFET characteristics

Abstract

Implementation of silicon on insulator (SOI) technology gives a great alternative to the miniaturization and reduction of short channel effects, allowing microelectronic evolution to proceed. This paper investigate the characteristics of n-channel partially depleted silicon on insulator (PDSOI) and fully depleted silicon on insulator (FDSOI) metal oxide semiconductor field effect transistor (MOSFET). Both transistors are investigated in terms of electrical characteristics which are the threshold voltage, leakage current and kink effect. Both PDSOI and FDSOI MOSFETs are simulated by using Silvaco TCAD tools. The SOI MOSFET structures are simulated in Silvaco Atlas 2-D numerical simulator. The threshold voltage and leakage current of PDSOI MOSFET with silicon film thickness of 0.2 µm are found to be 0.6357 V and 0.013 pA respectively. As for FDSOI MOSFET with silicon film thickness of 0.08 µm, the threshold voltage is 0.3642 V and leakage current of 0.034 pA. Additionally, the simulation result also shows that kink effect only presents in PDSOI MOSFET. After analysing the results, it can be concluded that FDSOI MOSFET has better performance than PDSOI MOSFET.