Abstract
This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are evaluated experimentally taking into account temperature variations. Then the switching characteristics are firstly introduced into the transfer function of a SiC-inverter fed PMSM drive system. The main contribution of this paper is the investigation of the dynamic control performance features such as the fast response, the stability and the robustness of the drive system considering the characteristics of SiC MOSFETs. All the results of the SiC-drive system are compared to the silicon-(Si) insulated gate bipolar transistors (IGBTs) drive system counterpart, and the SiC-drive system manifests a higher dynamic performance than the Si-drive system. The analytical results have been effectively validated by experiments on a test bench.
Highlights
Wide band-gap power device materials, such as silicon carbide (SiC), are drawing increasing attention due to a number of superior qualities they possess, such as high switching-speed, lower specific on-resistance, and higher junction operating temperature capability [1,2,3,4,5,6,7]
The SiC-inverter can provide higher efficiency and higher power density in comparison to its silicon (Si) inverter counterpart [8,9,10,11], which is benefit for the electric vehicles with limited capacity battery [11,12]. Aside for these inverter-level benefits, the SiC-inverter affects features of the dynamic performance of a motor drive system, such as fast response, relative stability and robustness, etc. This has not been clearly addressed yet, this paper investigates the impact of a SiC-inverter on the performance of a motor drive system, which is unlike some previous works that solely considered
Thanks to the superior characteristics of the SiC metal oxide semiconductor field effect transistors (MOSFETs), the phase and amplitude margins can be further increased by decreasing the dead time and the switching period, whereas, the phase and amplitude margins of the Si-drive system are penalized by its limited switching speed and operation frequency
Summary
Wide band-gap power device materials, such as silicon carbide (SiC), are drawing increasing attention due to a number of superior qualities they possess, such as high switching-speed, lower specific on-resistance, and higher junction operating temperature capability [1,2,3,4,5,6,7]. The SiC-inverter can provide higher efficiency and higher power density in comparison to its silicon (Si) inverter counterpart [8,9,10,11], which is benefit for the electric vehicles with limited capacity battery [11,12] Aside for these inverter-level benefits, the SiC-inverter affects features of the dynamic performance of a motor drive system, such as fast response, relative stability and robustness, etc. Because of its high efficiency and fast response characteristics, permanent magnet synchronous motors (PMSMs) are widely adopted in a host of high performance applications where low torque ripple, high efficiency, and remarkable dynamic response are highly demanded, such as dynamic positioning systems, machine-tool spindle electrical power steering and traction drives in electric vehicles, etc.
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