Abstract
Silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module is the next generation switching device for the medium voltage (MV) variable frequency drive (VFD). This paper investigates two problems which compromise system reliability and robustness of SiC MV VFD products. The first object is to mitigate the overvoltage transients on AC induction motors when connected through a cable of arbitrary length to a MV VFD consisting of a pulse-width modulation (PWM) inverter with SiC MOSFETs. The second topic is to develop the inverter thermal model to prevent the device failure from overheat issue. One solution is to design the smart SiC MOSFET gate driver with adjustable turn-on resistors. Second option is to use the dv / dt or sine-wave filters to smooth the inverter output waveforms. Analysis and simulations have been carried out to verify the proposal.
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