Abstract
A study is presented on the effects of voltage scaling on hot-electron phenomena and intrinsic device performance in submicrometer MOSFETs. A Monte Carlo device simulator featuring a suitable band model for high-energy electrons is used. An interesting finding is that at very short channel lengths the high energy tail of the electron distribution function, the most important quantity in determining hot-carrier reliability, is controlled by the applied bias and not by local electric fields. As confirmed by recently reported experimental work, the results of this study indicate that the conventional, linear voltage scaling can be weakened using a more relaxed voltage reduction law that leads to improved performance without threatening device reliability.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Published Version
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