Abstract
The effects of device scaling on electron heating and intrinsic device performance in deep submicron n-MOSFETs are investigated by means of a Monte Carlo device simulator featuring an original model for electron transport at high electric fields. It is shown that linear voltage scaling is too conservative for future deep submicron technologies, at least from the point of view of electron heating; in fact, weaker supply reductions (for example, designed for constant maximum lateral electric field) provide better device performance with no increase of hot electron effects. >
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