Abstract
Summary form only given. The two-dimensional nature of junction and MOS capacitances of a power MOSFET is studied in detail as a function of terminal voltages. It is shown that the voltage dependencies of interelectrode capacitances in the near-threshold regime play a critical role in determining the high-frequency switching characteristics of power MOSFETs. Detailed two-dimensional modeling of the on-resistance, avalanche breakdown voltage, and interelectrode capacitances was performed to determine the effect of device scaling and to compare the performances of vertical vs. lateral low-voltage power DMOSFETs for high-voltage discrete and smart-power applications. Theoretical calculations are shown to be in excellent agreement with measured high-frequency switching performances of scaled power MOSFETs fabricated using advanced refractory metallizations. >
Published Version
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