Abstract
The hot-carrier-induced degradation of silicon-on-insulator (SoI) lateral insulated gate bipolar transistor (LIGBT) under various ac stress conditions has been investigated. The gate voltage of the SoI LIGBT is pulsed with different frequencies, duty cycles, and rise/fall times, while a constant voltage is applied at the collector. Experiments show that the RON degradation is enhanced by increasing the gate pulse stress frequency. In addition, large duty cycle with fixed gate pulse stress frequency produces more severe RON degradation. Furthermore, the influence of the pulse rise/fall times on the RON degradation is also studied. It has been discovered that the short pulse rise/fall times imply much more serious hot-carrier degradation. Based on the experiments and simulations, several possible dynamic degradation mechanisms are proposed.
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