Abstract
AbstractThin films of cubic In2Se3 have been grown by low‐pressure metal‐organic chemical vapor deposition (LP‐MOCVD) using the novel precursor In(Se2CNMe n‐hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500°C, and characterized by X‐ray diffraction and scanning electron microscopy.
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