The formation of luminescence centers in silicon crystals after electron irradiation and ion implantation at 20 K

Abstract

The formation of radiation damage in silicon crystals after low-temperature (20 to 25 K) electron irradiation or ion implantation is studied by the luminescence method. It is found that the carbon impurity atoms take an active part in the processes of interaction with primary radiation defects at low temperatures. Implantation of carbon ions confirms their participation in the formation processes of the luminescence centers corresponding to the 0.8559 eV electron–vibronic band. The annealing behavior in the temperature range from 20 to 400 K and its comparison with EPR and IR absorption data on radiation damage suggest a correlation of the 0.8559 eV luminescence band with interstitial carbon atoms. [Russian Text Ignored]