Abstract
This is the first report on the current saturation behavior observed in the forward characteristics of polarization superjunction (PSJ)‐based hybrid PiN‐Schottky GaN power diodes fabricated on Sapphire. In the current saturation region, most of the applied anode voltage is dropped across the regions immediately adjacent to the edge of the doped P‐GaN region closest to the cathode. This significant potential drop occurs within a short distance, resulting in a high electric field and depletion of electrons, causing the current saturation behavior via velocity saturation in these PSJ hybrid diodes.
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