Abstract
The origin of the main defect-impurity complexes induced in silicon crystals with different contents of oxygen and carbon impurity atoms by electron irradiation in the temperature range 30–600°C has been investigated by means of IR absorption spectroscopy. The efficiencies of the formation of various optically active centers as a function of temperature of irradiation are obtained. The radiation-enhanced formation of a complex consisting of a substitutional carbon and oxygen dimer (Tirrad = 450°C) is revealed in carbon-containing Si. After irradiation at Tirrad = 500°C, vacancy–oxygen trimer–carbon centers, which give rise to vibrational absorption bands at 902, 956, and 1025 cm−1, are detected for the first time.
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