Abstract
Thermal defect generation processes are investigated in heat-treated (250 to 600 °C, 1 to 500 h) silicon crystals by a low-temperature photoluminescence method. In the spectral range from 0.75 to 1.20 eV, a number of emission bands are found. Some of these bands have been already observed in the luminescence spectra of irradiated silicon. The bands are found to cause the thermallyinduced defects, incorporating oxygen and carbon impurity atoms. Experimental data on the uniaxial stress splitting of the 0.7667 and 0.9259 eV zero-phonon luminescence lines associated with the oxygen thermal donors are presented. [Russian Text Ignored]
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
