Abstract
This is the first report on the current saturation behavior observed in the forward characteristics of polarization superjunction (PSJ)‐based hybrid PiN‐Schottky GaN power diodes fabricated on Sapphire. In the current saturation region, most of the applied anode voltage is dropped across the regions immediately adjacent to the edge of the doped P‐GaN region closest to the cathode. This significant potential drop occurs within a short distance, resulting in a high electric field and depletion of electrons, causing the current saturation behavior via velocity saturation in these PSJ hybrid diodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
