Abstract
An accurate numerical approach is presented for the evaluation of geometrical effects in four point probe resistivity measurements upon semiconductors. The accuracy of the approach is illustrated by comparing results obtained with correction factors tabulated for probe measurements upon circular and rectangular geometries. Correction factors are presented for measurements with a square probe array upon rectangular specimens. The effect of increasing thickness for specimens of bounded geometry is also investigated. The method allows four point probe measurements to be made not only with an arbitrary probe configuration but also upon thin specimens of an arbitrary geometry.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
