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Abstract
A niobium-doped SrTiO3 single crystal was grown using the FZ (floating zone) method. The single crystal was sliced in two, and the two halves were joined by thin film of Bi2O3 which was sandwiched between the two half-crystals at a high temperature (1400°C). The electrical properties of the obtained bicrystal were similar to those of a SrTiO3 IBL capacitor. The bicrystal was considered to be applicable to the study of ceramic grain boundary properties.
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