The effects of water vapor, heating, and chemical and mechanical polishing on MOS capacitors passivated with BaF 2–B 2O 3–GeO 2–SiO 2 glasses

Abstract

The capacitance and voltage (C–V) characteristics of metal oxide semiconductor (MOS) capacitors passivated with BaF 2–B 2O 3–GeO 2–SiO 2 and BaO–B 2O 3–GeO 2–SiO 2 glasses with various OH – radicals and the effects of water vapor, heat, and chemical and mechanical polishing on these MOS capacitors were investigated. As the OH – absorption coefficients of the glasses increased, an adverse effect on the recovery of hysteresis loops of C–V shifts was observed. An adverse effect on the hysteresis loops and V g shifts was observed when the MOS capacitors were exposed to water vapor, but the hysteresis of the MOS capacitor passivated with BaF 2-containing glass disappeared following heat treatment at 400°C for 1 h. When chemical and mechanical polishing was applied to the glasses in the MOS capacitors, improvements in hysteresis and V g shifts were observed.