The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage

Abstract

In order to determine the surface states (Nss), series resistance (Rs), and (Cu:TiO2) interlayer effects on the electrical characteristics of the Al/Cu:TiO2/n-Si metal oxide semiconductor (MOS) capacitors, both capacitance (C) and conductance (G) values were measured for frequency ranges of 10 kHz–1 MHz and ±5 V voltage ranges. In addition, to know Cu doping concentration effect on the MOS capacitor, the Al/Cu:TiO2/n-Si was fabricated with various rates Cu:TiO2 interlayer (5, 10, 15%) grown on n-Si susbtrate by spin-coating. The increase in capacitance via decreasing frequencies was attributed to the existence of Nss and their relaxation time. The frequency dependent diffusion potential (Vd), doping of donor atoms (Nd), Fermi energy (EF), barrier height (Фb) and depletion layer width (Wd) values were extracted from the linear part of reverse bias C−2-V curves. While the value the Rs decreased with increasing frequency, the Nss values increased for the three MOS capacitors. The profiles of Nss and Rs depending on voltage were also plotted by Nicollian-Brews methods and using high-low frequency (CHF-CLF) capacitance, respectively. The mean values of Nss for three capacitors were found at about 1012 eV−1cm−2 as suitable electronic devices. The lower values of the Nss can be attributed to passivation effect of Cu:TiO2 interlayer.