Abstract
Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.
Highlights
Titanium nitride (TiN) is a potential application specific material, which provides a favourable combination of physical and chemical properties for semiconductor manufacturing such as low resistance, comparatively high transmittance within the visible spectrum, hardness and PLOS ONE | DOI:10.1371/journal.pone.0161736 August 29, 2016Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure chemical resistance [1]
The reliance of the mechanical and electrical properties of titanium nitride thin films deposited with the help of variety of techniques upon silicon substrates have been studied in past to exhibit their potential for CMOS industry driven applications [2]
We investigate the MOSCAP structure as part of the CMOS family in terms of its sensitive electrical characteristics including detailed I-V and C-V analysis
Summary
Titanium nitride (TiN) is a potential application specific material, which provides a favourable combination of physical and chemical properties for semiconductor manufacturing such as low resistance, comparatively high transmittance within the visible spectrum, hardness and PLOS ONE | DOI:10.1371/journal.pone.0161736 August 29, 2016. Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure chemical resistance [1]. The reliance of the mechanical and electrical properties of titanium nitride thin films deposited with the help of variety of techniques upon silicon substrates have been studied in past to exhibit their potential for CMOS industry driven applications [2]. In some previous studies [3,4], the TiN-Si hetrojunctions were fabricated by the deposition of TiN thin films onto the refined Si substrates by using the DC reactive magnetron sputtering These nitrides have shown to exhibit the property to tune the work function due to their thermal stability [5]. MOSCAP structure is fabricated by utilizing HfSiO layer as high-k dielectric material instead of conventional SiO2 knowing its competitiveness of EOT scaling. The electrical characteristics of the MOSCAP devices are measured using a sophisticated Automatic System for Material Electro-Physical Characterization (ASMEC) tool in the Advanced Electronics Laboratory
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