Abstract
ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature. And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors. The temperature to fabricate ZnO MOS capacitors is 400°C, and the low temperature process is applicable for thin film transistors, flat-panel display (FPD), flexible display, etc. The electronic availability of ZnO thin films, which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated. High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured. The thermal stability and electronic stability of the ZnO capacitors are investigated, respectively. Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics. Besides, the ZnO capacitors can exhibit high thermal and electronic stabilities.
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