The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy

Abstract

ABSTRACT ITO films have been grown by ion beam-assisted deposition (IBAD) using 90In-10Sn (wt% ) alloy. The electrical and optical properties of these films have been investigated as a function of oxygen flux, evaporation rate, ion energy and substrate temperature during deposition. The films with resistivity as low as 2.4 u 10  3 : ˜cm (at room temperature) and 810u:˜  4 cm (at 150 ) have been deposited, and the transmittance of all samples in the visible range is above 82%. The deposited films at room temperature are polycrystalline w ith a preferred orientation of (222) and the size of crystal particle is about 21nm, and the surface roughness for the ITO films grown at room temperature is Ra= 5.32nm . Keywords : ion beam-assisted reactive deposi tion; low temperature; ITO films 1. INTRODUCTION Indium tin oxide (ITO) film is a wide-band, n-type doped semiconductor material. Due to high transmission between 380nm to 800nm and low resistivity, ITO films was widely used in all kinds of photoelectric devices ,such as, LCD iTFEL i solar battery and so on. Because of high reflectivity in in frared region, ITO films can be also used for radiation protection glass. In addition, it is also a sort of electromagnetism shield material due to high reflectivity in the radio region