Abstract
The optoelectronic and mechanical properties of flexible indium tin oxide (ITO) films are critical to the development of flexible optoelectronic devices. To improve the characteristics of the flexible films, the effects of inorganic buffer layers on the optoelectronic and mechanical characteristics of flexible ITO films prepared by ion-beam assisted deposition at room temperature were investigated. The results show that four inorganic buffer materials: SiO 2, Ta 2O 5, Al 2O 3 and TiO 2, have different effects on the optical transmission, sheet resistance and mechanical properties of ITO films. Ta 2O 5 buffer layer induces the highest optical transmission. SiO 2 buffer layer leads to the lowest sheet resistance. TiO 2 buffer layer reveals the most superior electrical stability against bending, which is attributed to the low thermal stress in ITO film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
