The effect of the substrate upon the gate and drain noise parameters of MOSFETs

Abstract

The effect of the substrate on the gate and drain noise parameters in MOSFETs is calculated up to first order terms in jw, under the assumption that the channel has thermal noise. It is shown that the substrate doping has little influence on the gate noise, i g 2 , and on the cross correlation between gate and drain noise i gi d ∗ . The theory cannot explain Halladay and van der Ziel's data. Therefore a non-thermal noise source must be operating in the channel.