The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

Abstract

The effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements at room temperature. The energy dependent interface states density (Nss) was obtained from the forward bias I–V data by taking into account voltage dependent effective barrier height (Φe) for two diodes, i.e. with and without Mo doping. The voltage dependent resistance (Ri) of structures was also obtained using Ohm׳s law and the method of Nicollian and Brews for the diodes. In order to eliminate the effect of series resistance (Rs), C and G/ω at high frequency values were corrected. Nss and Rs values were compared between the diodes and experimental results showed that Nss and Rs values of the Mo-doped PVC+TCNQ structure are considerably lower than those of the undoped PVC+TCNQ structure. The other important parameters such as ideality factor (n), reverse saturation current (Is), zero-bias barrier heights (ΦBo) and Rs were obtained from forward bias I–V data by using I–V, Cheung and Norde methods. Experimental results confirmed that the Mo-doped (PVC+TCNQ) layer considerably improved the performance of the Au/PVC+TCNQ/p-Si structure.