Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature

Abstract

The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current–voltage (I-V), capacitance–voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature. The energy dependent profile of surface states (Nss) was obtained by taking into account voltage dependent effective barrier height (Φe), ideality factor (n) and series resistance (Rs) of the structure. Voltage dependent profile of resistivity (Ri) and some main electrical parameters such as reverse saturation current (Io), ideality factor (n) and zero-bias barrier height (ΦBo) were also evaluated from the forward bias I-V data. Experimental results reveal that the fabricated MPS structure has a higher rectification ratio with low reverse leakage current. The double logarithmic I-V plot was drawn and it shows a power-law behavior of the current (I ∝ V m). The forward and reverse bias C-V and G/ω-V measurements were carried out at enough high frequency (1 MHz) and then to eliminate of the Rs the measured C-V and G/ω-V plots were corrected. The C-V and G/ω-V plots exhibit inductive behavior at accumulation region due to the effect of Nss and Rs. The other some electrical parameters such as concentration of acceptor atoms (NA) and barrier height (ΦB) were also obtained from the slope and intercept of reverse bias C− 2 vs V plot. Further, both the forward and reverse bias conduction mechanisms of the MPS structure are also discussed compare with the literature.