Abstract
The effect of light-soaking on the dark conductivity and photoconductivity in a-Si:H films is investigated. Undoped films prepared by CVD method were subjected to light-soaking and then annealed at different temperatures. Dark conductivity was measured in the temperature range 150–415 K and photoconductivity was measured between 150 and 300 K. The results are discussed in terms of the effect of light-soaking on the localized states within the mobility gap. It is determined that light-soaking affects the states close to the middle of the bandgap rather than the states at the band tails.
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