Abstract
The variations in dark conductivity and photoconductivity with thickness of the intrinsic (i) layer in n-i-p-i… multilayers show opposite trends. These are explained in terms of dopant diffusion and phosphoruus-boron deep trap centers. Effects of light soaking and deposition at non-optimal substrate temperature or discharge power are detailed. In all cases they reduce the persistent photoconductivity which is maximized when film defects are held to a minimum.
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