Abstract
Within the framework of effective-mass approximation, we have calculated theoretically the effects of hydrostatic pressure and doping concentration on subband structure and optical transitions in modulation-doped GaAs/Al x Ga 1− x As quantum well for different well widths. The electronic structure of modulation-doped quantum well under the hydrostatic pressure is determined by solving the Schrödinger and Poisson equations self-consistently. The results obtained show that intersubband transitions and the subband energy levels in the modulation-doped quantum well can be significantly modified and controlled by the well width, donor concentration and hydrostatic pressure.
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