Abstract

In this study, the linear, the third-order nonlinear and total optical absorption coefficients and refractive index changes of a modulation-doped GaAs/AlxGa1−xAs quantum well are investigated numerically. In the effective-mass approximation, the electronic structure of modulation-doped quantum well is calculated by solving the Schrödinger and Poisson equations self-consistently. Optical properties are obtained using the compact density matrix approach. The effects of structure parameters, the applied magnetic field and the hydrostatic pressure on the optical properties of the modulation-doped quantum well are studied. Results show that the resonant peaks shift toward the higher (lower) energies with the increase in the magnetic field (pressure). The magnitude of the resonant peaks of the optical properties decreases with the increasing magnetic field or pressure.

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