Abstract
We present the results of the calculation of the low-temperature electron mobility in one-side modulation-doped single asymmetric quantum wells, taking into account the presence of residual impurities. The effects of ionized acceptors were included in the variational calculation within the depletion approximation. All relevant scattering rates were taken into account, namely acoustic phonons, ionized impurities (remote and background), alloy disorder and interface roughness. The mobility dependencies on the electron gas density and residual acceptor concentration were found and we show that the background impurity scattering rate is the main scattering mechanism for acceptor concentrations above ∼3×10 15 cm −3 , in good agreement to recent experimental works involving high-quality GaAs/AlGaAs modulation-doped quantum wells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
