Abstract
The impact of high temperature ion implantation on the electrical performances of 4H-SiC MOSFETs is investigated. The effect of single-step high temperature ion implantation in P-well, N+, P+ regions and that of three-step implantations are compared firstly. It is found that neither high temperature ion implantation of N+ nor P+ can obviously improve the ohmic contact characteristics. The variations in electrical parameters are analyzed, showing that three-step high temperature ion implantations have made contribution to the improvements of Vth and RDSON. Therefore, it is significant to improve the performance of SiC MOSFETs by using three-step high temperature ion implantations.
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