High-temperature implantation of boron ions into silcon

Abstract

Abstract Anomalies of the implanted dopant diffusion in Si often cannot be interpreted unambiguously.1 The presence of free vacancies in the layer results in the essential enhancement of boron diffusion in Si.2 There is a temperature for each semiconductor material when the probability for any defect associations to exist in the implanted layer (IL) during implantation is extremely small and non-equilibrium point defects only exist in it. We consider such a defect state as a physical criterion for applying the term of High Temperature Ion Implantation (HTII). Application of the HTII technique enabled us to obtain the deep penetration of the implanted dopant. The boron penetration (E = 40 keV, j = 40 μA/cm2, D=1.1016 ion/cm2) ranged in depth up to 4.5 μm at T ir = 1150°C.