Abstract
We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.
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